Infineon HEXFET Type N-Channel MOSFET, 42 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.19 374 00 

(exc. VAT)

Kr.24 216 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 6,458Kr. 19 374,00

*price indicative

RS Stock No.:
214-9128
Mfr. Part No.:
IRFR4104TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

59nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

2.39 mm

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

It comes with Advanced Process Technology

The MOSFET is Lead-Free

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