Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 25 units)*

Kr.455 075

(exc. VAT)

Kr.568 85

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

600 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
25 - 25	Kr. 18,203	Kr. 455,08
50 - 100	Kr. 17,293	Kr. 432,33
125 - 225	Kr. 16,565	Kr. 414,13
250 - 600	Kr. 15,838	Kr. 395,95
625 +	Kr. 14,744	Kr. 368,60

*price indicative

RS Stock No.:: 919-4873
Mfr. Part No.:: IRFP150NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	160W
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Width	5.3 mm
	Height	20.3mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 160W
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Width 5.3 mm
	Height 20.3mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 42A Maximum Continuous Drain Current, 160W Maximum Power Dissipation - IRFP150NPBF

This MOSFET is designed for high-performance applications that require efficient switching. With its N-channel configuration, it effectively manages substantial power loads, making it a key component in various electronic circuits and power management systems. Its ability to function across a wide temperature range increases its adaptability in various environments.

Features & Benefits

• Maximum continuous drain current of 42A

• Maximum drain-source voltage of 100V

• Low Rds(on) of 36mΩ for enhanced efficiency

• Maximum power dissipation of 160W

• Utilises enhancement mode for improved operation

• Integrated in a TO-247AC package for straightforward mounting

Applications

• Utilised in power supply circuits for automation devices

• Suitable for motor control in industrial machinery

• Employed in renewable energy systems for effective power conversion

• Applicable for high-frequency switching in telecommunications

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, permitting use in challenging conditions.

What is the maximum gate-source voltage it can handle?

The device is designed to handle a maximum gate-source voltage of -20V and +20V, providing varied options for circuit design.

How does the low Rds(on) benefit performance?

A low Rds(on) minimises power losses during operation, thus enhancing overall efficiency and thermal management.

Is it suitable for through-hole mounting?

Yes, the TO-247AC package is specifically intended for through-hole mounting applications.

What considerations should be taken during installation?

Ensure the device is adequately cooled during operation to maintain optimal performance and prevent overheating.