onsemi NTH4LN067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN067N65S3H

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Subtotal (1 pack of 2 units)*

Kr.149 64 

(exc. VAT)

Kr.187 04 

(inc. VAT)

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2 - 18Kr. 74,82Kr. 149,64
20 - 198Kr. 64,52Kr. 129,04
200 +Kr. 55,94Kr. 111,88

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Packaging Options:
RS Stock No.:
221-6710
Mfr. Part No.:
NTH4LN067N65S3H
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

NTH4LN067N

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

67mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

266W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.8mm

Height

22.74mm

Standards/Approvals

RoHS

Width

5.2 mm

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 691 pF

100% avalanche tested

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