onsemi NTP067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP067N65S3H
- RS Stock No.:
- 221-6742
- Mfr. Part No.:
- NTP067N65S3H
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.115 32
(exc. VAT)
Kr.144 16
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 57,66 | Kr. 115,32 |
| 20 - 198 | Kr. 49,705 | Kr. 99,41 |
| 200 + | Kr. 43,13 | Kr. 86,26 |
*price indicative
- RS Stock No.:
- 221-6742
- Mfr. Part No.:
- NTP067N65S3H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | NTP067N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 266W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.7 mm | |
| Height | 16.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series NTP067N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 266W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.7 mm | ||
Height 16.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 691 pF
100% avalanche tested
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