DiodesZetex Dual DMN Type N-Channel MOSFET, 217 mA, 60 V Enhancement, 6-Pin SOT-363

Subtotal (1 reel of 3000 units)*

Kr.1 383 00 

(exc. VAT)

Kr.1 728 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 0,461Kr. 1 383,00

*price indicative

RS Stock No.:
222-2847
Mfr. Part No.:
DMN66D0LDWQ-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

217mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-363

Series

DMN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

250mW

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

1.3 mm

Length

2.15mm

Height

0.95mm

Standards/Approvals

RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0

Automotive Standard

AEC-Q101, AEC-Q100, AEC-Q200

The DiodesZetex Dual N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

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