DiodesZetex Dual DMN Type N-Channel MOSFET, 217 mA, 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- RS Stock No.:
- 222-2848
- Mfr. Part No.:
- DMN66D0LDWQ-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.24 75
(exc. VAT)
Kr.30 95
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 2 350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | Kr. 0,495 | Kr. 24,75 |
| 100 - 200 | Kr. 0,48 | Kr. 24,00 |
| 250 - 450 | Kr. 0,469 | Kr. 23,45 |
| 500 - 950 | Kr. 0,458 | Kr. 22,90 |
| 1000 + | Kr. 0,448 | Kr. 22,40 |
*price indicative
- RS Stock No.:
- 222-2848
- Mfr. Part No.:
- DMN66D0LDWQ-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 217mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 1.3 mm | |
| Standards/Approvals | RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Length | 2.15mm | |
| Height | 0.95mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 217mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 1.3 mm | ||
Standards/Approvals RoHS, J-STD-020, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Length 2.15mm | ||
Height 0.95mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
The DiodesZetex Dual N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
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