DiodesZetex Dual DMT Type N-Channel MOSFET, 26.5 A, 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4014LDV-7
- RS Stock No.:
- 222-2873
- Mfr. Part No.:
- DMT4014LDV-7
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.213 05
(exc. VAT)
Kr.266 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 925 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 8,522 | Kr. 213,05 |
| 50 - 75 | Kr. 8,351 | Kr. 208,78 |
| 100 - 225 | Kr. 5,917 | Kr. 147,93 |
| 250 + | Kr. 5,798 | Kr. 144,95 |
*price indicative
- RS Stock No.:
- 222-2873
- Mfr. Part No.:
- DMT4014LDV-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMT | |
| Package Type | PowerDI3333-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.019Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMT | ||
Package Type PowerDI3333-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.019Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low RDS(ON) — Ensures On-State Losses Are Minimized
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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