DiodesZetex DMT N-Channel MOSFET, 16.1 A, 60 V Enhancement, 8-Pin VDFN

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Subtotal (2000 units, on reels of 2000)*

Kr. 16 236,00

(exc. VAT)

Kr. 20 296,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 +Kr. 8,118Kr. 16 236,00

*price indicative

RS Stock No.:
222-2880
Mfr. Part No.:
DMT64M8LCG-7
Brand:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16.1A

Maximum Drain Source Voltage Vds

60V

Series

DMT

Package Type

VDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

10V

Maximum Power Dissipation Pd

2.16W

Maximum Operating Temperature

150°C

Width

0.8mm

Standards/Approvals

No

Length

3.3mm

Height

3.3mm

Automotive Standard

No

The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.

High Conversion Efficiency

Low RDS(ON)—Minimizes On State Losses

Low Input Capacitance

Fast Switching Speed

ESD Protected Gate

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