Microchip Complementary Pair TC6320 1 P-Channel, N channel-Channel MOSFET Arrays, 2 A, 200 V Enhancement, 8-Pin VDFN
- RS Stock No.:
- 598-279
- Mfr. Part No.:
- TC6320K6-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
Kr. 58 891,80
(exc. VAT)
Kr. 73 616,40
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 05 November 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3300 + | Kr. 17,846 | Kr. 58 891,80 |
*price indicative
- RS Stock No.:
- 598-279
- Mfr. Part No.:
- TC6320K6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC6320 | |
| Package Type | VDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Complementary Pair | |
| Length | 0.40mm | |
| Height | 1.35mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC6320 | ||
Package Type VDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Complementary Pair | ||
Length 0.40mm | ||
Height 1.35mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
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