Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,
- RS Stock No.:
- 598-776
- Mfr. Part No.:
- TC8220K6-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
Kr.121 542 30
(exc. VAT)
Kr.151 928 70
(inc. VAT)
FREE delivery for online orders over 500,00 kr
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Units | Per unit | Per Reel* |
|---|---|---|
| 3300 + | Kr. 36,831 | Kr. 121 542,30 |
*price indicative
- RS Stock No.:
- 598-776
- Mfr. Part No.:
- TC8220K6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | DFN | |
| Series | TC8220 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Two Pairs of N and P Channel | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Length | 4mm | |
| Height | 1mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type DFN | ||
Series TC8220 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Two Pairs of N and P Channel | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Length 4mm | ||
Height 1mm | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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