Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8
- RS Stock No.:
- 598-568
- Mfr. Part No.:
- TC7920K6-G
- Brand:
- Microchip
Subtotal (1 reel of 3300 units)*
Kr.118 044 30
(exc. VAT)
Kr.147 556 20
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 3300 + | Kr. 35,771 | Kr. 118 044,30 |
*price indicative
- RS Stock No.:
- 598-568
- Mfr. Part No.:
- TC7920K6-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | N channel, P-Channel | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | DFN | |
| Series | TC7920 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.8V | |
| Transistor Configuration | Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.15 mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type N channel, P-Channel | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type DFN | ||
Series TC7920 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.8V | ||
Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | ||
Maximum Operating Temperature 150°C | ||
Width 4.15 mm | ||
Height 1mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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