Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

RS Stock No.:: 214-4334
Mfr. Part No.:: BSL308CH6327XTSA1
Brand:: Infineon

Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

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Subtotal (1 reel of 3000 units)*

Kr. 5 745,00

(exc. VAT)

Kr. 7 182,00

(inc. VAT)

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Units	Per unit	Per Reel*
3000 - 3000	Kr. 1,915	Kr. 5 745,00
6000 +	Kr. 1,868	Kr. 5 604,00

*price indicative

RS Stock No.:: 214-4334
Mfr. Part No.:: BSL308CH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET Arrays
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	57mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	-5nC
	Maximum Power Dissipation Pd	0.6W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Width	1.6mm
	Standards/Approvals	IEC61249-2-21, RoHS
	Length	2.9mm
	Height	1mm
	Number of Elements per Chip	1
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET Arrays
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 57mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs -5nC
	Maximum Power Dissipation Pd 0.6W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Width 1.6mm
	Standards/Approvals IEC61249-2-21, RoHS
	Length 2.9mm
	Height 1mm
	Number of Elements per Chip 1
	Automotive Standard AEC-Q101

Datasheet - BSL308CH6327XTSA1

Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1

This MOSFET array device provides paired P‑channel and N‑channel transistors in a compact surface‑mount package for switching and power-management roles in automotive and industrial electronics. It is supplied in a TSOP 6‑pin format designed for board‑level integration and operation across a wide ambient range, supporting typical gate-charge behaviour suited to rapid switching tasks.

Features and Benefits:

• Low Rds(on) 57mΩ reduces conduction losses and heat generation
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures

Applications

• Suitable for automotive body control modules requiring AEC compliance
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs

What mounting type is required for board assembly?

It is a surface‑mount device in a TSOP 6‑pin package intended for reflow soldering to standard PCB land patterns.

How does it behave across temperature extremes?

The device is specified to operate from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.

Are there separate transistor elements per chip?

There is one element per chip configured as a dual transistor arrangement delivering both P‑ and N‑channel functions.

What standards and material compliance are indicated?

The component is RoHS‑compliant and manufactured using materials conformant with IEC 61249‑2‑21.