Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.7 626 00
(exc. VAT)
Kr.9 534 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 3 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 2,542 | Kr. 7 626,00 |
| 6000 + | Kr. 2,415 | Kr. 7 245,00 |
*price indicative
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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