Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 223-8521
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
Kr.18 945 00
(exc. VAT)
Kr.23 680 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 20 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | Kr. 3,789 | Kr. 18 945,00 |
*price indicative
- RS Stock No.:
- 223-8521
- Mfr. Part No.:
- IPG20N06S4L26AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Height | 1mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Height 1mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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