Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS Stock No.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.156 48
(exc. VAT)
Kr.195 60
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 19 950 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 135 | Kr. 10,432 | Kr. 156,48 |
| 150 - 360 | Kr. 9,907 | Kr. 148,61 |
| 375 - 735 | Kr. 9,487 | Kr. 142,31 |
| 750 - 1485 | Kr. 9,091 | Kr. 136,37 |
| 1500 + | Kr. 8,451 | Kr. 126,77 |
*price indicative
- RS Stock No.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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