Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.20 310 00 

(exc. VAT)

Kr.25 390 00 

(inc. VAT)

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  • 5 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
5000 +Kr. 4,062Kr. 20 310,00

*price indicative

RS Stock No.:
214-9057
Mfr. Part No.:
IPG16N10S461AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

61mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

29W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5.15mm

Height

1mm

Width

5.9 mm

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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