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Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

RS Stock No.:: 214-9062
Mfr. Part No.:: IPG20N06S4L11AATMA1
Brand:: Infineon

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.156 95

(exc. VAT)

Kr.196 19

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 14 760 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	Kr. 15,695	Kr. 156,95
50 - 90	Kr. 14,906	Kr. 149,06
100 - 240	Kr. 14,277	Kr. 142,77
250 - 490	Kr. 13,671	Kr. 136,71
500 +	Kr. 12,71	Kr. 127,10

*price indicative

RS Stock No.:: 214-9062
Mfr. Part No.:: IPG20N06S4L11AATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS-T2
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.2mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	65W
	Maximum Gate Source Voltage Vgs	±16 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	41nC
	Transistor Configuration	Dual N Channel Logic Level Enhancement Mode
	Maximum Operating Temperature	175°C
	Height	1mm
	Width	5.9 mm
	Standards/Approvals	RoHS, MSL1, AEC Q101
	Length	5.15mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS-T2
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.2mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 65W
	Maximum Gate Source Voltage Vgs ±16 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 41nC
	Transistor Configuration Dual N Channel Logic Level Enhancement Mode
	Maximum Operating Temperature 175°C
	Height 1mm
	Width 5.9 mm
	Standards/Approvals RoHS, MSL1, AEC Q101
	Length 5.15mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N06S4L11AATMA1

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

FREE delivery for online orders over 500,00 kr

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