Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET, 20 A, 60 V TDSON

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Subtotal (1 reel of 5000 units)*

Kr.36 925 00 

(exc. VAT)

Kr.46 155 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 7,385Kr. 36 925,00

*price indicative

RS Stock No.:
258-3878
Mfr. Part No.:
IPG20N06S4L11ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

IPG20N06S4L-11

Package Type

TDSON

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

±16 V

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS T2 power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Exposed pad provides excellent thermal transfer, two N-Channel MOSFETs in one package with 2 isolated lead frames.

Dual N-channel Logic Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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