Infineon Dual N Channel Normal Level IPG 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS Stock No.:
- 229-1841
- Mfr. Part No.:
- IPG20N04S409ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.135 04
(exc. VAT)
Kr.168 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 15 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 13,504 | Kr. 135,04 |
| 50 - 90 | Kr. 12,824 | Kr. 128,24 |
| 100 - 240 | Kr. 12,287 | Kr. 122,87 |
| 250 - 490 | Kr. 11,749 | Kr. 117,49 |
| 500 + | Kr. 10,937 | Kr. 109,37 |
*price indicative
- RS Stock No.:
- 229-1841
- Mfr. Part No.:
- IPG20N04S409ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 54W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 54W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual N Channel Normal Level | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Width 5.9 mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
Related links
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1
- Infineon CoolMOS™ Dual Silicon N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S4L22ATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1