Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON

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Kr.34 64 

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Kr.43 30 

(inc. VAT)

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2 - 18Kr. 17,32Kr. 34,64
20 - 48Kr. 15,615Kr. 31,23
50 - 98Kr. 14,53Kr. 29,06
100 - 198Kr. 13,50Kr. 27,00
200 +Kr. 12,585Kr. 25,17

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Packaging Options:
RS Stock No.:
258-3883
Mfr. Part No.:
IPG20N10S4L22AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOSTM-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Dual N

Typical Gate Charge Qg @ Vgs

21nC

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

60W

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC Q101 qualified

MSL1 up to 260°C peak reflow

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