Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

Subtotal (1 reel of 5000 units)*

Kr.30 365 00 

(exc. VAT)

Kr.37 955 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 6,073Kr. 30 365,00

*price indicative

RS Stock No.:
258-3880
Mfr. Part No.:
IPG20N06S4L11ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

OptiMOSTM-T2

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

AEC Q101

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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