Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON IPG20N04S4L08AATMA1
- RS Stock No.:
- 214-9060
- Mfr. Part No.:
- IPG20N04S4L08AATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.205 845
(exc. VAT)
Kr.257 31
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 995 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 13,723 | Kr. 205,85 |
| 75 - 135 | Kr. 13,041 | Kr. 195,62 |
| 150 - 360 | Kr. 11,745 | Kr. 176,18 |
| 375 + | Kr. 11,684 | Kr. 175,26 |
*price indicative
- RS Stock No.:
- 214-9060
- Mfr. Part No.:
- IPG20N04S4L08AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 54W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Enhancement Mode | |
| Width | 5.9 mm | |
| Height | 1mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 54W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Enhancement Mode | ||
Width 5.9 mm | ||
Height 1mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Related links
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1