MPN

Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1

RS Stock No.:: 214-9058
Mfr. Part No.:: IPG16N10S461AATMA1
Brand:: Infineon

Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.223 06

(exc. VAT)

Kr.278 82

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 8 660 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	Kr. 11,153	Kr. 223,06
100 - 180	Kr. 8,70	Kr. 174,00
200 - 480	Kr. 8,14	Kr. 162,80
500 - 980	Kr. 7,591	Kr. 151,82
1000 +	Kr. 7,024	Kr. 140,48

*price indicative

RS Stock No.:: 214-9058
Mfr. Part No.:: IPG16N10S461AATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	OptiMOS-T2
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	61mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	5.4nC
	Maximum Power Dissipation Pd	29W
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Width	5.9 mm
	Standards/Approvals	RoHS
	Length	5.15mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series OptiMOS-T2
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 61mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 5.4nC
	Maximum Power Dissipation Pd 29W
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Width 5.9 mm
	Standards/Approvals RoHS
	Length 5.15mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG16N10S461AATMA1

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1

FREE delivery for online orders over 500,00 kr

Related links