Infineon CoolMOS Type N-Channel MOSFET, 31 A, 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1

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Subtotal (1 pack of 5 units)*

Kr.226 94 

(exc. VAT)

Kr.283 675 

(inc. VAT)

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  • 3 820 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 5Kr. 45,388Kr. 226,94
10 - 20Kr. 43,106Kr. 215,53
25 - 45Kr. 39,49Kr. 197,45
50 - 120Kr. 34,022Kr. 170,11
125 +Kr. 29,516Kr. 147,58

*price indicative

Packaging Options:
RS Stock No.:
222-4654
Mfr. Part No.:
IPB60R099P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns

Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Best in class RDS(on) /package

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