Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2

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Subtotal (1 pack of 15 units)*

Kr.172 395 

(exc. VAT)

Kr.215 49 

(inc. VAT)

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  • Plus 15 unit(s) shipping from 29. desember 2025
  • Plus 11 625 unit(s) shipping from 05. januar 2026
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Units
Per unit
Per Pack*
15 - 60Kr. 11,493Kr. 172,40
75 - 135Kr. 10,921Kr. 163,82
150 - 360Kr. 10,456Kr. 156,84
375 - 735Kr. 9,999Kr. 149,99
750 +Kr. 9,305Kr. 139,58

*price indicative

Packaging Options:
RS Stock No.:
222-4666
Mfr. Part No.:
IPD50N06S4L08ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

71W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.3mm

Width

6.22 mm

Length

6.5mm

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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