Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.29 380 00 

(exc. VAT)

Kr.36 725 00 

(inc. VAT)

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Units
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Per Reel*
5000 +Kr. 5,876Kr. 29 380,00

*price indicative

RS Stock No.:
222-4680
Mfr. Part No.:
IPG20N10S4L22ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

CoolMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

21nC

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1mm

Length

5.15mm

Width

5.9 mm

Standards/Approvals

AEC-Q101

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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