Infineon CoolMOS Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1

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Subtotal (1 pack of 5 units)*

Kr.173 21 

(exc. VAT)

Kr.216 51 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 34,642Kr. 173,21
25 - 45Kr. 30,132Kr. 150,66
50 - 120Kr. 28,05Kr. 140,25
125 - 245Kr. 26,334Kr. 131,67
250 +Kr. 24,276Kr. 121,38

*price indicative

Packaging Options:
RS Stock No.:
222-4683
Mfr. Part No.:
IPL60R185C7AUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

VSON

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

77W

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

8.1mm

Width

8.1 mm

Height

1.1mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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