Infineon CoolMOS Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON

View all MOSFETs

Subtotal (1 reel of 3000 units)*

Kr.31 167 00 

(exc. VAT)

Kr.38 958 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +Kr. 10,389Kr. 31 167,00

*price indicative

RS Stock No.:
222-4682
Mfr. Part No.:
IPL60R185C7AUMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

VSON

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

77W

Maximum Operating Temperature

150°C

Length

8.1mm

Standards/Approvals

No

Height

1.1mm

Width

8.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

Related links