Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (30 units, in tubes of 30)*
Kr. 1 560,87
(exc. VAT)
Kr. 1 951,08
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | Kr. 52,029 | Kr. 1 560,87 |
| 60 - 120 | Kr. 49,428 | Kr. 1 482,84 |
| 150 + | Kr. 46,305 | Kr. 1 389,15 |
*price indicative
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 171W | |
| Minimum Operating Temperature | -55°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 171W | ||
Minimum Operating Temperature -55°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Related links
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- Infineon CoolMOS C7 N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-247
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- Infineon CoolMOS N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R110CFD7XKSA1
