Infineon CoolMOS Type N-Channel MOSFET, 106 A, 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- RS Stock No.:
- 236-3681
- Mfr. Part No.:
- IPZA65R018CFD7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.197 84
(exc. VAT)
Kr.247 30
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 70 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | Kr. 197,84 |
| 5 - 9 | Kr. 187,96 |
| 10 - 24 | Kr. 180,07 |
| 25 - 49 | Kr. 172,06 |
| 50 + | Kr. 160,27 |
*price indicative
- RS Stock No.:
- 236-3681
- Mfr. Part No.:
- IPZA65R018CFD7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247-4 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247-4 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 106 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
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