Infineon CoolMOS Type N-Channel MOSFET, 63.3 A, 700 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.2 505 36 

(exc. VAT)

Kr.3 131 70 

(inc. VAT)

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  • Plus 90 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 30Kr. 83,512Kr. 2 505,36
60 - 60Kr. 79,336Kr. 2 380,08
90 +Kr. 74,325Kr. 2 229,75

*price indicative

RS Stock No.:
222-4724
Mfr. Part No.:
IPW65R048CFDAFKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63.3A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-247

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

48mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

270nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

21.1mm

Width

5.21 mm

Standards/Approvals

No

Length

16.13mm

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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