Infineon CoolMOS N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
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Kr. 214,60
(exc. VAT)
Kr. 268,25
(inc. VAT)
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 25 - 100 | Kr. 8,584 | Kr. 214,60 | - |
| 125 - 225 | Kr. 6,443 | Kr. 161,08 | 24% |
| 250 - 600 | Kr. 6,095 | Kr. 152,38 | 28% |
| 625 - 1225 | Kr. 5,679 | Kr. 141,98 | 33% |
| 1250 + | Kr. 5,235 | Kr. 130,88 | 39% |
*price indicative
- RS Stock No.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | SOT-223 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 6.3W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type SOT-223 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 6.3W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Related links
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