Infineon CoolMOS N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223
- RS Stock No.:
- 222-4686
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
Kr. 8 073,00
(exc. VAT)
Kr. 10 092,00
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 3 000 unit(s) shipping from 28 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 2,691 | Kr. 8 073,00 |
| 6000 + | Kr. 2,556 | Kr. 7 668,00 |
*price indicative
- RS Stock No.:
- 222-4686
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 6.3W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 6.3W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Related links
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