Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247

View all MOSFETs
Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.2 823 45 

(exc. VAT)

Kr.3 529 32 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 480 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 - 30Kr. 94,115Kr. 2 823,45
60 - 60Kr. 89,409Kr. 2 682,27
90 +Kr. 83,762Kr. 2 512,86

*price indicative

RS Stock No.:
222-4718
Mfr. Part No.:
IPW60R018CFD7XKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

416W

Typical Gate Charge Qg @ Vgs

251nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Width

21.1 mm

Height

5.21mm

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Related links