Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.7 457 60 

(exc. VAT)

Kr.9 321 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 9,322Kr. 7 457,60
1600 +Kr. 8,856Kr. 7 084,80

*price indicative

RS Stock No.:
222-4734
Mfr. Part No.:
IRF3205ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

170W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

76nC

Height

4.83mm

Width

9.65 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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