Infineon HEXFET N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252 IRFR3910TRLPBF
- RS Stock No.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
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Kr. 224,58
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Kr. 280,72
(inc. VAT)
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- 20 unit(s) ready to ship
- Plus 6 280 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 80 | Kr. 11,229 | Kr. 224,58 | - |
| 100 - 180 | Kr. 9,324 | Kr. 186,48 | 16% |
| 200 - 480 | Kr. 8,798 | Kr. 175,96 | 21% |
| 500 - 980 | Kr. 8,569 | Kr. 171,38 | 23% |
| 1000 + | Kr. 8,363 | Kr. 167,26 | 25% |
*price indicative
- RS Stock No.:
- 222-4753
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 110V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 79W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 110V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 79W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
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