Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 222-4752
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.14 991 00
(exc. VAT)
Kr.18 738 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 4,997 | Kr. 14 991,00 |
| 6000 + | Kr. 4,747 | Kr. 14 241,00 |
*price indicative
- RS Stock No.:
- 222-4752
- Mfr. Part No.:
- IRFR3910TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 110V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 110V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Related links
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