Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

Kr.4 384 00 

(exc. VAT)

Kr.5 480 00 

(inc. VAT)

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Last RS stock
  • Final 8 000 unit(s), ready to ship
Units
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Per Reel*
2000 - 2000Kr. 2,192Kr. 4 384,00
4000 - 4000Kr. 2,082Kr. 4 164,00
6000 +Kr. 1,951Kr. 3 902,00

*price indicative

RS Stock No.:
215-2596
Mfr. Part No.:
IRFR120ZTRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

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