Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.66 174 00 

(exc. VAT)

Kr.82 716 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 22,058Kr. 66 174,00

*price indicative

RS Stock No.:
244-2257
Mfr. Part No.:
AUIRFR024NTRL
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon AUIRFR024NTRL Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Planar Technology

Low On-Resistance Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified

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