Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 250 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.24 546 00 

(exc. VAT)

Kr.30 684 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 8,182Kr. 24 546,00

*price indicative

RS Stock No.:
222-4613
Mfr. Part No.:
AUIRFR4292TRL
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

345mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.73 mm

Length

6.22mm

Height

2.39mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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