Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.452 20

(exc. VAT)

Kr.565 25

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

250 unit(s) ready to ship
Plus 550 unit(s) shipping from 02. januar 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	Kr. 9,044	Kr. 452,20
100 - 200	Kr. 7,145	Kr. 357,25
250 - 450	Kr. 6,692	Kr. 334,60
500 - 1200	Kr. 6,242	Kr. 312,10
1250 +	Kr. 5,789	Kr. 289,45

*price indicative

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	82W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Height	8.77mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 82W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Height 8.77mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications

• Efficient design lowers thermal resistance for effective cooling

• Fast switching speeds improve performance in dynamic systems

• Simple drive requirements aid in circuit integration

• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation

• Employed in motor control systems for efficient functionality

• Ideal for DC-DC converters and power management circuits

• Used in HVAC systems to control compressor motors

• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.