Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-5025
- Mfr. Part No.:
- IRF630NPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
Kr. 442,05
(exc. VAT)
Kr. 552,55
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 150 unit(s) ready to ship
- Plus 150 unit(s) shipping from 06 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 8,841 | Kr. 442,05 |
| 100 - 200 | Kr. 6,985 | Kr. 349,25 |
| 250 - 450 | Kr. 6,544 | Kr. 327,20 |
| 500 - 1200 | Kr. 6,10 | Kr. 305,00 |
| 1250 + | Kr. 5,658 | Kr. 282,90 |
*price indicative
- RS Stock No.:
- 919-5025
- Mfr. Part No.:
- IRF630NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 82W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 82W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.54mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF
This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.
Features & Benefits
• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions
Applications
• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency
What is the maximum gate-source voltage that can be applied?
The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.
How does the device handle thermal dissipation during operation?
It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.
Is there a specific mounting type recommended for optimal performance?
The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.
What type of applications benefit from its fast switching capabilities?
Applications requiring high-speed operation, like switching power supplies and compact converters, take advantage of its swift switching speeds.
Related links
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF630NPBF
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- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220