Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.847 60 

(exc. VAT)

Kr.1 059 50 

(inc. VAT)

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In Stock
  • 750 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 16,952Kr. 847,60
100 - 200Kr. 13,73Kr. 686,50
250 - 450Kr. 12,884Kr. 644,20
500 - 950Kr. 12,035Kr. 601,75
1000 +Kr. 11,019Kr. 550,95

*price indicative

RS Stock No.:
145-8608
Mfr. Part No.:
IRFB4020PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

100W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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