Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF

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Subtotal (1 pack of 5 units)*

Kr.83 74 

(exc. VAT)

Kr.104 675 

(inc. VAT)

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  • 80 unit(s) ready to ship
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Per unit
Per Pack*
5 - 45Kr. 16,748Kr. 83,74
50 - 120Kr. 15,078Kr. 75,39
125 - 245Kr. 14,048Kr. 70,24
250 - 495Kr. 13,064Kr. 65,32
500 +Kr. 12,218Kr. 61,09

*price indicative

Packaging Options:
RS Stock No.:
688-6939
Distrelec Article No.:
304-43-452
Mfr. Part No.:
IRFB4020PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Height

9.02mm

Width

4.82 mm

Automotive Standard

No

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