Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

RS Stock No.:: 130-1000
Distrelec Article No.:: 304-36-991
Mfr. Part No.:: IRFS4020TRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.104 63

(exc. VAT)

Kr.130 79

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

800 unit(s) shipping from 02. april 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	Kr. 20,926	Kr. 104,63
50 - 120	Kr. 19,974	Kr. 99,87
125 - 245	Kr. 19,516	Kr. 97,58
250 - 495	Kr. 18,99	Kr. 94,95
500 +	Kr. 18,51	Kr. 92,55

*price indicative

RS Stock No.:: 130-1000
Distrelec Article No.:: 304-36-991
Mfr. Part No.:: IRFS4020TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	105mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	9.65mm
	Width	4.83 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 105mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 9.65mm
	Width 4.83 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF

This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.

Features & Benefits

• Designed for high-efficiency Class-D audio amplification

• Low Rds(on) improves overall efficiency

• Operating junction temperature up to 175°C ensures robustness

• Repetitive avalanche capability safeguards against voltage spikes

Applications

• Utilised in Class-D audio amplifiers for improved sound quality

• Ideal for high current power supply

• Suitable for consumer and professional audio equipment

• Employed in high-performance automotive audio systems

What is the maximum continuous drain current?

The device can handle a maximum continuous drain current of 18A at 25°C.

Can this device operate at high temperatures?

Yes, it is designed to function effectively at temperatures as high as 175°C.

What configurations can it be used in?

It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.

How does low gate charge impact performance?

The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.

Is it compatible with surface mount technology?

Yes, this device is packaged in a D2PAK form factor, which is Ideal for surface mount applications.