Infineon HEXFET Type N-Channel MOSFET, 94 A, 200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

Kr.1 188 625 

(exc. VAT)

Kr.1 485 775 

(inc. VAT)

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Units
Per unit
Per Tube*
25 +Kr. 47,545Kr. 1 188,63

*price indicative

RS Stock No.:
913-3907
Mfr. Part No.:
IRFP90N20DPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

94A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

580W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

15.9mm

Width

5.3 mm

Height

20.3mm

Automotive Standard

No

COO (Country of Origin):
MX

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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