Infineon HEXFET Type N-Channel MOSFET, 100 A, 200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

Kr.1 088 975 

(exc. VAT)

Kr.1 361 225 

(inc. VAT)

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Last RS stock
  • Final 1 100 unit(s), ready to ship
Units
Per unit
Per Tube*
25 - 25Kr. 43,559Kr. 1 088,98
50 - 100Kr. 41,381Kr. 1 034,53
125 +Kr. 39,637Kr. 990,93

*price indicative

RS Stock No.:
217-2594
Mfr. Part No.:
IRF200P223
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

313W

Typical Gate Charge Qg @ Vgs

55nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

34.9mm

Standards/Approvals

No

Width

5.31 mm

Length

15.87mm

Automotive Standard

No

The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. .

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dv/dt and di/dt Capability

Pb-Free ; RoHS Compliant ; Halogen-Free

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