Infineon HEXFET N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247

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Kr. 799,65

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Kr. 999,55

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25 - 25Kr. 31,986Kr. 799,65-
50 - 100Kr. 30,389Kr. 759,73Kr. 79,85
125 - 225Kr. 29,108Kr. 727,70Kr. 359,75
250 - 475Kr. 27,831Kr. 695,78Kr. 1 038,75
500 +Kr. 25,909Kr. 647,73Kr. 3 038,50

*price indicative

RS Stock No.:
919-5019
Mfr. Part No.:
IRFP260NPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

-20V, +20V

Typical Gate Charge Qg @ Vgs

234nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

20.3mm

Width

5.3mm

Length

15.9mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF


This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits


• Supports continuous drain currents up to 50A for strong performance

• Operates efficiently with a maximum drain-source voltage of 200V

• Enhancement mode design offers improved control and versatility

• Low Rds(on) of 40mΩ reduces energy losses

• Designed for through-hole mounting, facilitating easy installation

Applications


• Utilised in power supply circuits for managing high currents

• Suitable for automotive requiring durable electronic components

• Applied in industrial equipment for effective power control

• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?


The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?


The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?


This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?


The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

How does the enhance mode design affect performance?


The enhancement mode design ensures that the device conducts only when sufficient gate voltage is applied, improving switching efficiency and reducing unwanted current flow during inactive periods.

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