Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

Kr.51 73 

(exc. VAT)

Kr.64 662 

(inc. VAT)

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  • Plus 1 522 unit(s) shipping from 02. januar 2026
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Units
Per unit
Per Pack*
2 - 18Kr. 25,865Kr. 51,73
20 - 48Kr. 22,25Kr. 44,50
50 - 98Kr. 20,765Kr. 41,53
100 - 198Kr. 19,45Kr. 38,90
200 +Kr. 17,905Kr. 35,81

*price indicative

RS Stock No.:
688-6973
Mfr. Part No.:
IRFB5620PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

14W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Height

9.02mm

Automotive Standard

No

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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