Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

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Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.620 40 

(exc. VAT)

Kr.775 50 

(inc. VAT)

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In Stock
  • 1 500 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 12,408Kr. 620,40
100 - 200Kr. 10,051Kr. 502,55
250 - 450Kr. 9,429Kr. 471,45
500 - 950Kr. 8,809Kr. 440,45
1000 +Kr. 8,225Kr. 411,25

*price indicative

RS Stock No.:
124-9009
Mfr. Part No.:
IRFB5620PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

14W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
MX

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