Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM

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Subtotal (1 tray of 10 units)*

Kr.57 231 00 

(exc. VAT)

Kr.71 538 80 

(inc. VAT)

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Units
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Per Tray*
10 +Kr. 5 723,10Kr. 57 231,00

*price indicative

RS Stock No.:
222-4795
Mfr. Part No.:
FF6MR12KM1BOSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

1200V

Series

FF6MR

Package Type

AG-62MM

Mount Type

Chassis

Maximum Drain Source Resistance Rds

5.81mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.85V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic™ MOSFET.

High current density

Low switching losses

Superior gate oxide reliability

Highest robustness against humidity

Robust integrated body diode, and thus optimal thermal conditions

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